29 August 2022
Copenhagen University- Frederiksberg campus
Europe/Copenhagen timezone

Hole spin qubits in Silicon finFETs

29 Aug 2022, 11:45
25m
A1-05.01 (Copenhagen University- Frederiksberg campus)

A1-05.01

Copenhagen University- Frederiksberg campus

Dyrlægevej 100, 1870 Frederiksberg

Speaker

Leon Camenzind (RIKEN)

Description

The greatest challenge in quantum computing is achieving scalability. Classical computing, which previously faced such issues, currently relies on silicon chips hosting billions of fin field-effect transistors (finFETs). These devices are small enough for quantum applications: an electron or hole trapped under the gate can serve as a spin qubit at low temperatures. This approach allows quantum hardware and its classical control electronics to be integrated on the same chip. However, this requires qubit operation at temperatures above 1 K, where the cooling overcomes heat dissipation of this control electronics. Here, we show that our industry-compatible silicon finFET devices [1] can host hole spin qubits above 4 K [2]. We achieve fast electrical spin control with operation speeds up to 150 MHz, single-qubit gate fidelities at the fault-tolerance threshold, and controllable exchange interaction, allowing a fast CROT (CX) gate with a conditional spin-flip in 32 ns. The strong spin-orbit interaction in these devices leads to anisotropies and coherence hotspots in the single and two-qubit gates, which we investigate to improve the quality of our qubits.
[1] Geyer et al., Appl. Phys. Lett. 118 (2021).
[2] Camenzind et al., Nature Electronics 5 (2022).

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