Jul 7 – 11, 2008
The Niels Bohr Institute
Europe/Copenhagen timezone

This workshop focuses on the problem of nonequilibrium electron transport through nano-scale single-electron transistors. In recent years, the intense experimental scrutiny of gated quantum dots, or single conjugated molecules, contacted by source, and drain electrodes has uncovered a large number of interesting nonlinear transport phenomena. These phenomena are driven by the finite source-drain bias applied across the nano-junctions, and in many respects we are facing an entirely new class of quantum impurity problems, in which the quantum-states of the ‘impurity’ are no longer thermally occupied. The aim of the workshop is to discuss the salient features in the ‘bias-spectroscopy’ of such nano-structures by assessing the relevant physical mechanisms, such as electron correlations, interference, multiple orbitals, spin or vibrational degrees of freedom, involved e.g. in inelastic cotunneling, negative-differential resistance and Kondo-effect. Furthermore, we wish to address the methodological aspect by discussions of the theoretical tools available for controlled calculations on systems out of equilibrium.

The Niels Bohr Institute
Blegdamsvej 17 DK-2100 Copenhagen
Conference secretary: Anna Maria Rey (NBIA), rey[at]nbi.dk Sponsored by: the Danish Agency for Science, Technology and Innovation and the Niels Bohr International Academy.